Dominik MOSER

 dominik_moser.jpg Host Laboratory KIM LAB.
Position in LIMMS EUJO-LIMMS Researcher (IMTEK)
Main Research Topic in LIMMS

NANOTECH - Thermal Conductivity of Ultra-Thin Silicon Nitride Films


Thermal Conductivity, Silicon Nitride, Surface Phonon Polaritons


Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Phone:+81 (0)3 5452 6036 / Fax:+81 (0)3 5452 6088


IMTEK - Department of Microsystems Engineering
Microsystem Materials Laboratory (MML), University of Freiburg
Georges-Koehler-Allee 103, 79110 Freiburg, Germany

E-mail moserd at
Download icon_pdf.gifAbstract2015_DMoser.pdf


Short resume :
2014 - now EUJO-LIMMS visiting researcher, Kim Lab, IIS, The University of Tokyo, Japan
Since 2012 PhD student, Microsystem Materials Lab, IMTEK, University of Freiburg, Germany
2010-2012 PhD training program "Micro Energy Harvesting", IMTEK, University of Freiburg, Germany
2004-2009 Diploma Degree in Microsystems Engineering, University of Freiburg, Germany

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Research Projects in Limms

1- Thermal Conductivity of Ultra-Thin Silicon Nitride Films
Context :
Since advances in integration density of ICs and MEMS have shrunk the dimensions of these devices, surface effects have became increasingly important. It has been shown that that energy transport in ultra-thin SiO2 films can be drastically enhanced by surface phonon polaritons (SPPs) [1]. Besides SiO2, silicon nitride is the most commonly used dielectric material in semiconductor technology, hence it is of great interest for thermal management of devices fabricated using that technology. Furthermore, the mechanical pre-stress in silicon nitride films can be tuned so that free-standing structures for thermal transport investigations can easily be fabricated.
Objectives & Methods :
Within this projects the excitation of SPPs in silicon-rich silicon nitride (SiN) films will be investigated by Fourier transform infrared spectroscopy (FTIR). Furthermore, methods for thermal conductivity measurements of ultra-thin SiN films are evaluated. Therefore, large free-standing membranes are fabricated and functional metal components are integrated on the membrane. This enables to apply well-known measurement techniques for the thermal conductivity [2,3] to these films.
Results :
The adsorption spectra of SiN films were investigated under different boundary conditions. Adsorption peaks were identified which can possibly assigned to SPP excitation (Fig. 1). Furthermore, ultra-thin (125 nm) and large (2×2 cm2) SiN membranes were fabricated with metal components on top (Fig. 2). With these membranes thermal conductivity measurements were performed using the 3w-technique [2].


 Fig. 1 FTIR adsorption spectrum (Kretschmann configuration) of a 125 nm SiN film on SiO2.


Fig. 2 2×2 cm2 membrane device for the measurement of the thermal conductivity using the 3w-technique.
References and publications :
[1]D.-Z.A. Chen, et al, Phys. Rev. B 72 (15435), 2005.

[2] D.G. Cahill and R.O. Pohl, Phys. Rev. B 8 (4067), 1987.

[3] F. Voelklein and E. Kessler, Exp. Tech. d. Phys. 33 (343), 1985.

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Main publication List (papers, conferences and patent)







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